Working principle and characteristic analysis of SiC MOSFET

Abstract Power semiconductor devices are frequently used in the electronic and power industries. As third-generation broadband gap devices, silicon carbide have attracted extensive attention. This paper introduces internal external structure of SiC MOSFET detail analyzes basic working principle electrical characteristics each stage conductive process. By analyzing theoretical calculation method threshold voltage under body effect relationship diagram drawn by specific experimental test results, it is proved that increase will lead to decrease voltage. Two main reasons for BTI explained: energy band shift SiC/SiO 2 interface small, there many charge traps at interface. Finally, influence drift caused charge: trap Q , oxide ot movable ion m fixed f analyzed. The research on important this reference significance improving reliability devices.